세미나

Actinic imaging research using synchrotron for the high-NA EUV era

: EUV patterning, pellicle metrology and 3D mask inspection

 

 

Even though the key photolithography process for minimizing feature size of semiconductor is moving closer to EUV Lithography, there are still numerous hurdles to overcome for the new EUV materials development. The use of existing metrology and inspection (MI) technology is limited due to the unique character of the EUV wavelength, and it is necessary to develop a new MI method that uses the 13.5nm wavelength termed actinic imaging technology for EUV materials development.

 

In this seminar, I will introduce the technology for measuring and evaluating EUV materials including EUV resist, pellicle and 3-dimensional mask pattern on a blank mask, as well as that will be required in the high-NA EUV era. Moreover, I would discuss and explain the status of the EUV dedicated synchrotron construction project. To address the shortage of High-NA EUV research infrastructures, Pohang Accelerator Laboratory is building a new compact EUV synchrotron and EUV R&D infrastructure dedicated to EUV Lithography.