Static and Low-frequency noise characterization of 2D electronic device
2022.04.02- 날짜
- 2022-04-28 16:00:00
- 학과
- 신소재공학과
- 장소
- 104-E205
- 연사
- 주민규 교수 (숙명여자대학교)
Static and Low-Frequency Noise Characterization of 2D Electronic Device
Min-Kyu, Joo
Department of Applied Physics, Sookmyung Women’s University, Seoul 04310, Republic of Korea
Abstract:
Recently, two-dimensional (2D) van der Waals (vdW) multilayer materials consisting of multiple conducting layers have explored intensively as a promising candidate for optoelectronic applications. But, to further provide a clear development road map, an accurate static and low-frequency (LF) noise characterization should be performed in terms of carrier conductivity, mobility, density, contact resistance, threshold voltage, and dielectric surface trap density to feedback for a device optimization. In this presentation, I will revisit numerous static and LF noise characterization methodologies, and applied them to 2D monolayer MoS2 to manifest various merits of the use of h-BN dielectrics for a 2D carrier transport. Next, the carrier dynamics of sulfur mono-vacancy in monolayer MoS2 will be discussed by combining (LF) noise measurements with conductive atomic force microscopy (C-AFM), extending LF noise spectroscopy into the nanoscale regime. This presentation would be helpful to realize high-performing electronic devices in 2D vdW materials by understanding defect dynamics.