세미나

Theoretical Understanding on the Chemical Principles of Atomic Layer Deposition

Bonggeun Shong

Chemical Engineering, Hongik University

Atomic layer deposition (ALD) is a vapor phase thin film deposition technique based on sequential, self-limiting surface reactions. Through ALD, exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition are achievable. Furthermore, area-selective ALD (AS-ALD) has recently emerged as a possible alternative bottom-up approach for nano-patterning. With these advantages, ALD is gaining interest as a powerful tool for many industrial and research applications, especially in microelectronic fabrication. Since the entire ALD process should be based only on the surfaces of the substrates, it is important to understand the surface chemical reaction mechanisms during ALD, in order to improve the process conditions and material quality of ALD. With development of modern simulation tools, utilization of quantum mechanical calculation is becoming increasingly useful toward deeper understanding and design of such chemical reactions. In this talk, fundamental principles governing the surface chemistry of ALD processes will be discussed. Especially, the talk will focus on the recent examples that theoretical analysis of various surface reactions together with experimental approaches could be synergistically enhance the research and development of ALD.