SEMINAR

Advances in materials fabrication and probing have been instrumental in the continued miniaturization of high-performance electronic and photonic devices. Soon, the feature size variability will be just a few atoms where the fundamental and engineering limits become significantly important. In this seminar, I will present my recent and previous studies implementing laser-material interactions for high-resolution and high-throughput laser processing and diagnostics to address these challenges. Firstly, I will introduce laser-assisted chemical processes for atomic layer doping and etching of semiconductor materials. I will begin by showing the development of a multi-laser-assisted system that can separately address photo-chemical and photo-thermal processes. This approach enables rewritable highly doped patterns in graphene and atomic layer precision etching of semiconductor materials. Secondly, I will showcase integration of ultrafast technique and scanning near-field optical microscopy (SNOM), probing free carrier dynamics in semiconductor materials in ultrahigh spatial- (10s nm) and temporal- (picosecond) resolutions. Finally, I will introduce wide-field spectroscopy for high-throughput materials inspection enabling data-driven prediction of materials failure.